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The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimized capacitive charge at turn-off behavior is independent of temperature.
Especially suited for use in interleaved or bridge-less topologies, this dual-diode rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
Key Features
- No or negligible reverse recovery
- Switching behavior independent of temperature
- High forward surge capability
- ECOPACK®2 compliant component
サンプル & 購入
| 製品型番 | 製品ステータス | 概算価格（USS） | 数量 | パッケージ | 梱包タイプ | Junction Temperature (°C) (max) | ECCN (US) | Country of Origin | 販売代理店からオーダー | STからオーダー |
|---|---|---|---|---|---|---|---|---|---|---|
| STPSC12H065CT |
アクティブ
|
1.441 | 100 | TO-220AB | Tube | 175 | EAR99 | CHINA | 在庫チェック | サンプル入手 |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
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| 製品型番 | 製品ステータス | パッケージ | グレード | RoHSコンプライアンスグレード | Material Declaration** |
|---|---|---|---|---|---|
| STPSC12H065CT |
アクティブ
|
TO-220AB | インダストリアル | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
