The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimized capacitive charge at turn-off behavior is independent of temperature.
Especially suited for use in interleaved or bridge-less topologies, this dual-diode rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
- No or negligible reverse recovery
- Switching behavior independent of temperature
- High forward surge capability
- ECOPACK®2 compliant component
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Distributor availability ofSTPSC12H065CT
Distributor reported inventory date: 2020-08-10
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|EAR99||NEC||Tube||TO-220AB||-||-||175||CHINA||1.441 / 100||