STPSC20H065C-Y
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Automotive 650 V, 20 A High Surge Silicon Carbide Power Schottky Diode

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Product overview

概要

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature and are ideal for automotive applications.

Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

  • All features

    • No or negligible reverse recovery
    • Switching behavior independent of temperature
    • Dedicated to PFC applications
    • High forward surge capability
    • AEC-Q101 qualified
    • ECOPACK®2 compliant component
    • PPAP capable

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STPSC20H065C-Y

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Quality and Reliability

Part Number Marketing Status Package Grade RoHSコンプライアンスグレード Longevity Commitment Longevity Starting Date Material Declaration**
STPSC20H065CWY
Active
TO-247 Automotive Ecopack2 - -

STPSC20H065CWY

Package:

TO-247

Material Declaration**:

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Marketing Status

Active

Package

TO-247

Grade

Automotive

RoHS Compliance Grade

Ecopack2

(**) st.comで提供している材料宣誓書は、パッケージ・ファミリ内で最も一般的に使用されているパッケージに基づく汎用ドキュメントの場合があります。そのため、特定の製品では100%正確ではない可能性があります。特定の製品情報については、セールスサポートまでお問い合わせください

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STPSC20H065CWY

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STPSC20H065CWY Active

Budgetary Price (US$)*/Qty:
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Part Number:

STPSC20H065CWY

Operating Temperature (°C)

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Max:

Junction Temperature (°C) (max):

175

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(*)概算用の参考価格(US$)です。現地通貨でのお見積りについては、STのセールス・オフィスまたは販売代理店までお問い合わせください。