STPSC30G065G2Y
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650 V, 30 A high surge silicon carbide power Schottky diode

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Product overview

概要

The SiC diode STPSC30G065G2Y, available in D2PAK HV, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.

Based on technology optimization, this diode has an improved forward surge current capability, making it ideal for use in PFC, where this ST SiC diode boost the performance in hard switching conditions. Using the latest design improvement of the “G” series of ST SiC diodes, as well as implemented tests in production, this diode is becoming the reference point in the combination of efficiency and application robustness to the application design.

  • All features

    • AEC-Q101 qualified and PPAP capable
    • No reverse recovery charge in application current range
    • Switching behaviour independent of temperature
    • High forward surge capability
    • Operating Tj from -55 °C to +175 °C
    • ECOPACK2 compliant component

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STMicroelectronics - STPSC30G065G2Y

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Quality and Reliability

Part Number Marketing Status Package Grade RoHSコンプライアンスグレード Longevity Commitment Longevity Starting Date Material Declaration**
STPSC30G065G2Y
Active
D2PAK HV Automotive Ecopack2 - -

STPSC30G065G2Y

Package:

D2PAK HV

Material Declaration**:

Marketing Status

Active

Package

D2PAK HV

Grade

Automotive

RoHS Compliance Grade

Ecopack2

(**) st.comで提供している材料宣誓書は、パッケージ・ファミリ内で最も一般的に使用されているパッケージに基づく汎用ドキュメントの場合があります。そのため、特定の製品では100%正確ではない可能性があります。特定の製品情報については、セールスサポートまでお問い合わせください

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STPSC30G065G2Y

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Part Number:

STPSC30G065G2Y

Junction Temperature (°C) (max):

175

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(*)概算用の参考価格(US$)です。現地通貨でのお見積りについては、STのセールス・オフィスまたは販売代理店までお問い合わせください。