STPSC4G065UFY
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Education Design Win
Automotive 650 V, 4A power Schottky High Surge silicon carbide diode

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Product overview

概要

The SiC diode, available in SMB-Flat, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Thanks to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Based on technology optimization, this diode has an improved forward surge current capability, making it ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions while bringing robustness to the design. Its high forward surge capability ensures a good robustness during transient phases.

  • All features

    • AEC-Q101 qualified and PPAP capable
    • None or negligible reverse recovery charge in application current range
    • Switching behaviour independent of temperature
    • High forward surge capability
    • Operating Tj from -55 °C to +175 °C
    • ECOPACK2 compliant component

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STMicroelectronics - STPSC4G065UFY

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Quality and Reliability

Part Number Marketing Status Package Grade RoHSコンプライアンスグレード Longevity Commitment Longevity Starting Date Material Declaration**
STPSC4G065UFY
Active
SMBFlat Automotive Ecopack3 10 2025-03-21T00:00:00.000+01:00

STPSC4G065UFY

Package:

SMBFlat

Material Declaration**:

PDF XML

Marketing Status

Active

Package

SMBFlat

Grade

Automotive

RoHS Compliance Grade

Ecopack3

(**) st.comで提供している材料宣誓書は、パッケージ・ファミリ内で最も一般的に使用されているパッケージに基づく汎用ドキュメントの場合があります。そのため、特定の製品では100%正確ではない可能性があります。特定の製品情報については、セールスサポートまでお問い合わせください

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STPSC4G065UFY

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STPSC4G065UFY Active

Budgetary Price (US$)*/Qty:
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Package:
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RoHS:
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Part Number:

STPSC4G065UFY

Junction Temperature (°C) (max):

175

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(*)概算用の参考価格(US$)です。現地通貨でのお見積りについては、STのセールス・オフィスまたは販売代理店までお問い合わせください。