The device is a low voltage NPN transistor with exceptional high gain performance coupled with very low saturation voltage. It is designed in planar technology with "base island" layout.
- Very low collector to emitter saturation voltage
- High current gain characteristic
- Fast-switching speed
Discover the full range of power bipolar PNP-NPN transistors, with a voltage rating up to 500 V.
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.