The devices are manufactured in planar base island technology with monolithic Darlington configuration.
- Good hFE linearity
- Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
- High fT frequency
Discover our Darlington transistor portfolio available with a voltage range up to 400 V, with both NPN and PNP polarity.
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.