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The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The device is designed for use in lighting applications and low cost switch-mode power supplies.
主な特徴
- INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE
- VERY HIGH SWITCHING SPEED
- STMicroelectronics PREFERRED SALES TYPE
- HIGH VOLTAGE CAPABILITY
- NPN TRANSISTOR
- MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
- LOW SPREAD OF DYNAMIC PARAMETERS
サンプル & 購入
| 製品型番 | パッケージ | 梱包タイプ | 製品ステータス | 概算価格（USS） | Quantity | ECCN (US) | Country of Origin | 販売代理店からオーダー | STからオーダー |
|---|---|---|---|---|---|---|---|---|---|
| BUL128D-B | TO-220AB | Tube | Active | - | EAR99 | CHINA | 在庫チェック | 購入 |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
ビデオ
| 製品型番 | 製品ステータス | パッケージ | グレード | RoHSコンプライアンスグレード | Material Declaration** |
|---|---|---|---|---|---|
| BUL128D-B | Active | TO-220AB | インダストリアル | Ecopack2 | |
BUL128D-B
Package:
TO-220ABMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
