The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The device is designed for use in lighting applications and low cost switch-mode power supplies.
- INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE
- VERY HIGH SWITCHING SPEED
- STMicroelectronics PREFERRED SALES TYPE
- HIGH VOLTAGE CAPABILITY
- NPN TRANSISTOR
- MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
- LOW SPREAD OF DYNAMIC PARAMETERS
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Quality and Reliability
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RoHS Compliance Grade
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
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Distributor availability ofBUL128D-B
Distributor reported inventory date: 2020-08-10