製品概要
概要
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
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特徴
- Very low RDS(on) over the entire temperature range
- Very high operating junction temperature capability (TJ = 200 °C)
- Very fast and robust intrinsic body diode
- Low capacitance
EDAシンボル / フットプリント / 3Dモデル
STマイクロエレクトロニクス - SCT20N120
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すべてのリソース
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SPICE models (1)
| タイトル | バージョン | 更新日 | |||
|---|---|---|---|---|---|
| ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 |