SCT20N120

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

Key Features

Very tight variation of on-resistance vs. temperature
Slight variation of switching losses vs. temperature
Very high operating temperature capability (200 °C)
Very fast and robust intrinsic body diode
Low capacitance
Easy to drive

Resources

Technical Documentation

Product Specifications

	Description	Version	Size
	DS10360: Silicon carbide Power MOSFET: 20 A, 1200 V, 189 mΩ (typ., TJ=150 °C), N-channel in a HiP247™	4.0	493 KB

Application Notes

	Description	Version	Size
	AN4671: How to fine tune your SiC MOSFET gate driver to minimize losses	1.1	555 KB
	AN3152: The right technology for solar converters	1.4	416 KB

Technical Notes & Articles

	Description	Version	Size
	TA0349: Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs	2.2	2 MB

User Manuals

	Description	Version	Size
	UM1575: Spice model tutorial for Power MOSFETs	1.3	1 MB

HW Model, CAD Libraries & SVD

	Description	Version	Size
	SCT20N120 PSpice model	1.0	7 KB

Publications and Collaterals

Flyers

	Description	Version	Size
	SiC MOSFETs: The real breakthrough in high-voltage switching	3.0	1 MB

Brochures

	Description	Version	Size
	Brochure Power management guide	10.2018	4 MB
	Electric vehicle (EV) ecosystem	1.1	1 MB

Conference Papers

Description	Version	Size
3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices	1.0	760 KB
Cost benefits of a SiC MOSFET-based high frequency converter	1.0	1 MB
Design rules for paralleling of Silicon Carbide Power MOSFETs	1.0	582 KB
SiC and Silicon MOSFET solution for high frequency DC-AC converters	1.0	1 MB
Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films	1.0	980 KB
Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate	1.0	1 MB
Wide bandgap materials: revolution in automotive power electronics	1.0	792 KB

Sample & Buy

Part Number	Package	Packing Type	Marketing Status	Unit Price (US$) *	Quantity	ECCN (US)	Country of Origin	More info	Order from ST	Order from Distributors
SCT20N120	HIP247	Tube	Active : Product is in volume production	10.5	1000	EAR99	CHINA	MORE INFO		DISTRIBUTOR AVAILABILITY

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors

Quality & Reliability

Part Number	Marketing Status	Package	Grade	RoHS Compliance Grade	Material Declaration**
SCT20N120	Active	HIP247	Industrial	Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.