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This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
主な特徴
- AEC-Q101 qualified
- Very high operating temperature capability (TJ = 200 °C)
- Very fast and robust intrinsic body diode
- Low capacitance
サンプル & 購入
| 製品型番 | パッケージ | 梱包タイプ | 製品ステータス | 概算価格（USS） | 数量 | ECCN (US) | Country of Origin | 販売代理店からオーダー | STからオーダー |
|---|---|---|---|---|---|---|---|---|---|
| SCTW100N65G2AG | HIP247 | Tube |
Active
|
- | - | EAR99 | CHINA | No availability of distributors reported, please contact our sales office |
SCTW100N65G2AG
パッケージ
HIP247梱包タイプ
TubeUnit Price (US$)
*(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
ビデオ
| 製品型番 | 製品ステータス | パッケージ | グレード | RoHSコンプライアンスグレード | 材料宣誓書** |
|---|---|---|---|---|---|
| SCTW100N65G2AG |
Active
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HIP247 | オートモーティブ | Ecopack2 |
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SCTW100N65G2AG
Package:
HIP247Material Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
