Product overview
概è¦
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.-
All features
- AEC-Q101 qualified
- Very high operating temperature capability (TJ = 200 °C)
- Very fast and robust intrinsic body diode
- Low capacitance
注目ビデオ
All resources
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製å“スペック (1)
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| 14 Sep 2020 |
14 Sep 2020
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アプリケーションノート (3)
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| 13 Sep 2018 |
13 Sep 2018
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技術ノート & 解説 (2)
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22 Sep 2020
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ユーザ･マニュアル (1)
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| 21 Oct 2016 |
21 Oct 2016
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フライヤ (5)
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08 May 2020
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| 14 Oct 2020 |
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| 15 May 2020 |
15 May 2020
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| 23 Mar 2020 |
23 Mar 2020
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パンフレット (1)
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| 23 Mar 2020 |
23 Mar 2020
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カンファレンス･ペーパー (5 of 7)
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| 23 Mar 2020 |
23 Mar 2020
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - SCTW100N65G2AG
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
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| 製å“型番 | Marketing Status | パッケージ | グレード | RoHSコンプライアンスグレード | æ料宣誓書** |
|---|---|---|---|---|---|
| SCTW100N65G2AG |
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|
HIP247 | オートモーティブ | Ecopack2 |
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サンプル & 購入
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|---|---|---|---|---|---|---|---|---|---|---|---|---|
| æœ€å° | 最大 | |||||||||||
| SCTW100N65G2AG | 4 distributors | Buy Direct |
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|
EAR99 | NEC | Tube | HIP247 | - | - | CHINA | ||
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