This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The main features of this product include remarkably low on-resistance per unit area and very good switching performance. The variation of both RDS(on) and switching losses are almost independent from junction temperature.
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|Part Number||Package||Packing Type||Marketing Status||Unit Price (US$) *||Quantity||ECCN (US)||Country of Origin||More info||Order from ST||Order from Distributors|
|SCTW100N65G2AG||HIP-247 IN LINE HEAT SINK 2MM||Tube||Evaluation : Product is under characterization. Limited Engineering samples available||-||-||EAR99||-||MORE INFO||No availability reported, please contact our Sales office|
|Part Number||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|SCTW100N65G2AG||Evaluation||HIP-247 IN LINE HEAT SINK 2MM||Automotive||Ecopack2|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.