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This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
主な特徴
- Very fast and robust intrinsic body diode
- Low capacitance
サンプル & 購入
| 製品型番 | パッケージ | 梱包タイプ | 製品ステータス | 概算価格（USS） | 数量 | ECCN (US) | Country of Origin | 販売代理店からオーダー | STからオーダー |
|---|---|---|---|---|---|---|---|---|---|
| SCTW35N65G2V | HIP247 | Tube | アクティブ | 16 | 1000 | EAR99 | CHINA | 販売代理店に在庫がない場合は、STのセールスオフィスまでお問い合わせください |
SCTW35N65G2V
パッケージ
HIP247梱包タイプ
TubeUnit Price (US$)
16.0*(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
ビデオ
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写真 品名 製造元 概要 
STDES-PFCBIDIR ST 15 kW, three-phase, three-level Active Front End (AFE) bidirectional converter for industrial and electric vehicle DC fast charging applications 
STEVAL-DPSTPFC1 ST 3.6 kW PFC totem pole with inrush current limiter reference design using TN3050H-12WY and SCTW35N65G2V 製品型番15 kW, three-phase, three-level Active Front End (AFE) bidirectional converter for industrial and electric vehicle DC fast charging applications
3.6 kW PFC totem pole with inrush current limiter reference design using TN3050H-12WY and SCTW35N65G2V
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| 製品型番 | 製品ステータス | パッケージ | グレード | RoHSコンプライアンスグレード | Material Declaration** |
|---|---|---|---|---|---|
| SCTW35N65G2V | アクティブ | HIP247 | インダストリアル | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
