製品概要

概要

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2^nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

特徴
Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitance

Very high operating junction temperature capability (T_J = 200°C)
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製品型番	ステータス	概要	タイプ	サプライヤ
STDES-PFCBIDIR	量産中	15 kW, three-phase, three-level Active Front End (AFE) bidirectional converter for industrial and electric vehicle DC fast charging applications	電源＆コンバータ･ソリューション用評価ボード	ST	STDES-PFCBIDIR 概要: 15 kW, three-phase, three-level Active Front End (AFE) bidirectional converter for industrial and electric vehicle DC fast charging applications
STDES-VIENNARECT	量産中	15 kW, three-phase Vienna rectifier with low cost mixed-signal control for power factor correction	電源＆コンバータ･ソリューション用評価ボード	ST	STDES-VIENNARECT 概要: 15 kW, three-phase Vienna rectifier with low cost mixed-signal control for power factor correction
STEVAL-DPSTPFC1	量産中	TN3050H-12WYおよびSCTW35N65G2Vを使用した、突入電流リミッタ付きの3.6kW トーテム･ポールPFCのリファレンス設計	電源＆コンバータ･ソリューション用評価ボード	ST	STEVAL-DPSTPFC1 概要: TN3050H-12WYおよびSCTW35N65G2Vを使用した、突入電流リミッタ付きの3.6kW トーテム･ポールPFCのリファレンス設計

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	Resource title		Latest update

製品スペック (1)

	Resource title		Latest update
PDF	DS12076 Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247 package 5.0		25 Jan 2021	25 Jan 2021 DS12076 Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247 package 5.0

アプリケーションノート (3)

	Resource title	Latest update
PDF	AN4671 How to fine tune your SiC MOSFET gate driver to minimize losses 1.1	03 Apr 2020	03 Apr 2020 AN4671 How to fine tune your SiC MOSFET gate driver to minimize losses 1.1
PDF	AN5355 Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp 1.0	15 Jul 2019	15 Jul 2019 AN5355 Mitigation technique of the SiC MOSFET gate voltage glitches with Miller clamp 1.0
PDF	AN3152 The right technology for solar converters 1.4	13 Sep 2018	13 Sep 2018 AN3152 The right technology for solar converters 1.4

技術ノート & 解説 (2)

	Resource title		Latest update
PDF	TA0349 Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs 2.2		03 Apr 2020	03 Apr 2020 TA0349 Comparative analysis of driving approach and performance of 1.2 kV SiC MOSFETs, Si IGBTs, and normally-off SiC JFETs 2.2
PDF	TN1340 Recommendation for die sintering with Ag finishing 1.0		22 Sep 2020	22 Sep 2020 TN1340 Recommendation for die sintering with Ag finishing 1.0

ユーザ･マニュアル (1)

	Resource title		Latest update
PDF	UM1575 Spice model tutorial for Power MOSFETs 1.3		21 Oct 2016	21 Oct 2016 UM1575 Spice model tutorial for Power MOSFETs 1.3

フライヤ (5)

	Resource title	Latest update
PDF	ST MOSFET Finder, the new app for Android and iOS 1.0	08 May 2020	08 May 2020 ST MOSFET Finder, the new app for Android and iOS 1.0
PDF	STPOWER SiC MOSFET : The real breakthrough in high-voltage switching 1.0	01 Feb 2021	01 Feb 2021 STPOWER SiC MOSFET : The real breakthrough in high-voltage switching 1.0
PDF	STPOWER TRANSISTORS 7/10 years longevity commitment program 1.0	14 Oct 2020	14 Oct 2020 STPOWER TRANSISTORS 7/10 years longevity commitment program 1.0
PDF	SiC MOSFET, the real breakthrough in high-voltage switching 1.1	15 May 2020	15 May 2020 SiC MOSFET, the real breakthrough in high-voltage switching 1.1
PDF	SiC MOSFETs: The real breakthrough in high-voltage switching 3.0	18 Mar 2021	18 Mar 2021 SiC MOSFETs: The real breakthrough in high-voltage switching 3.0

パンフレット (1)

	Resource title		Latest update
PDF	Electric vehicle (EV) ecosystem 1.1		23 Mar 2020	23 Mar 2020 Electric vehicle (EV) ecosystem 1.1

カンファレンス･ペーパー (5 of 7)

	Resource title	Latest update
PDF	3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0	23 Jul 2018	23 Jul 2018 3C-SiC Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiC Substrates for Sustainable Wide-Band-Gap Power Devices 1.0
PDF	Cost benefits of a SiC MOSFET-based high frequency converter 1.0	23 Mar 2020	23 Mar 2020 Cost benefits of a SiC MOSFET-based high frequency converter 1.0
PDF	Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0	25 Jul 2018	25 Jul 2018 Design rules for paralleling of Silicon Carbide Power MOSFETs 1.0
PDF	SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0	25 Jul 2018	25 Jul 2018 SiC and Silicon MOSFET solution for high frequency DC-AC converters 1.0
PDF	Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0	23 Jul 2018	23 Jul 2018 Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films 1.0
PDF	Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0	23 Jul 2018	23 Jul 2018 Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate 1.0
PDF	Wide bandgap materials: revolution in automotive power electronics 1.0	23 Mar 2020	23 Mar 2020 Wide bandgap materials: revolution in automotive power electronics 1.0