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  • The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability.

    It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

    主な特徴

    • High voltage capability
    • Low spread of dynamic parameters
    • Very high switching speed

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製品型番
パッケージ
Packing Type
Marketing Status
Budgetary Price (US$)*
数量
ECCN (US)
Country of Origin
Order from Distributors
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ST13003 SOT-32 Tube
Active
- - EAR99 INDIA No availability of distributors reported, please contact our sales office

ST13003

パッケージ

SOT-32

Packing Type

Tube

Unit Price (US$)

*

Marketing Status

Active

Unit Price (US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

INDIA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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00 Files selected for download

技術文書

    • Description バージョン サイズ アクション
      DS5292
      High voltage fast-switching NPN power transistor
      5.0
      241.61 KB
      PDF
      DS5292

      High voltage fast-switching NPN power transistor

製品型番 Marketing Status パッケージ Grade RoHS Compliance Grade Material Declaration**
ST13003
Active
SOT-32 インダストリアル Ecopack1

ST13003

Package:

SOT-32

Material Declaration**:

PDF XML

Marketing Status

Active

Package

SOT-32

Grade

Industrial

RoHS Compliance Grade

Ecopack1

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.