製品概要
概要
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast‑recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
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機能一覧
- AEC-Q101 qualified
- Fast-recovery body diode
- Lower RDS(on) per area vs previous generation
- Low gate charge, input capacitance and resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
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STMicroelectronics - STB41N40DM6AG
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すべてのリソース
| Resource title | Version | Latest update | Actions | Details | ダウンロード |
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SPICE models (1)
| Resource title | Version | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 08 Apr 2019 | 08 Apr 2019 |