STD10P10F6

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製品概要

概要

This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low R_DS(on) in all packages.

特徴
Very low on-resistance

Very low gate charge

High avalanche ruggedness

Low gate drive power loss
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