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This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics' unique “single feature size“ strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge.
特徴
- Designed for automotive applications and AEC-Q101 qualified
- Extremely low gate charge
- Exceptional dv/dt capability
- Low gate input resistance
- 100% avalanche tested
注目ビデオ
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
All tools & software
All resources
製品スペック (1)
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| 28 May 2015 |
28 May 2015
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アプリケーションノート (4)
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ユーザ･マニュアル (1)
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STD25NF20
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
品質 & 信頼性
サンプル & 購入
| 製品型番 | 販売代理店からオーダー | STからオーダー | 製品ステータス | ECCN (US) | ECCN (EU) | 梱包タイプ | パッケージ | 温度（℃） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小 | 最大 | |||||||||||
| STD25NF20 | 6 distributors | Buy Direct |
量産中
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EAR99 | NEC | Tape And Reel | DPAK | - | - | CHINA | ||
（*）概算用の希望小売単価（US$）です。現地通貨でのお見積りについては、STのセールス･オフィスまたは販売代理店までお問い合わせください。
