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These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
主な特徴
- Industry’s lowest RDS(on)x area
- Industry’s best figure of merit (FoM)
- Ultra low gate charge
- 100% avalanche tested
- Zener-protected
サンプル & 購入
| 製品型番 | パッケージ | Packing Type | Marketing Status | Budgetary Price (US$)* | 数量 | ECCN (US) | Country of Origin | Order from Distributors | Order from ST |
|---|---|---|---|---|---|---|---|---|---|
| STD4N80K5 | DPAK | Tape And Reel |
Active
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0.82 | 1000 | EAR99 | CHINA | Check Availability |
STD4N80K5
パッケージ
DPAKPacking Type
Tape And ReelUnit Price (US$)
0.82*(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
ビデオ
開発ツール･ハードウェア
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写真 Part number 製造元 Description ST MOSFET Finder ST MOSFET product finder application for Android and iOS 製品型番MOSFET product finder application for Android and iOS
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| 製品型番 | Marketing Status | パッケージ | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STD4N80K5 |
Active
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DPAK | インダストリアル | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
