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This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique \"Single Feature Size\" strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge.
主な特徴
- Standard threshold drive
- 100% avalanche tested
サンプル & 購入
| 製品型番 | パッケージ | 梱包タイプ | 製品ステータス | 概算価格（USS） | 数量 | ECCN (US) | Country of Origin | 販売代理店からオーダー | STからオーダー |
|---|---|---|---|---|---|---|---|---|---|
| STD65N55F3 | DPAK | Tape And Reel | アクティブ | 1.213 | 1000 | EAR99 | CHINA | 在庫チェック | 購入 |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
ビデオ
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
開発ツール･ハードウェア
| 製品型番 | 製品ステータス | パッケージ | グレード | RoHSコンプライアンスグレード | Material Declaration** |
|---|---|---|---|---|---|
| STD65N55F3 | アクティブ | DPAK | オートモーティブ | Ecopack1 | |
STD65N55F3
Package:
DPAKMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
