Product overview
Description
This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique \"Single Feature Size\" strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge.
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All features
- Standard threshold drive
- 100% avalanche tested
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EDA Symbols, Footprints and 3D Models
All resources
Resource title | Version | Latest update |
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SPICE models (1)
Resource title | Version | Latest update | ||
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ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 |
Quality and Reliability
Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
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STD65N55F3 | Active | DPAK | Automotive | Ecopack1 | |
STD65N55F3
Package:
DPAKMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
Part Number | Order from distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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min | max | |||||||||||
STD65N55F3 | distributors No availability of distributors reported, please contact our sales office | Active | EAR99 | NEC | Tape and Reel | DPAK | - | - | CHINA | |
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors