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This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
主な特徴
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
サンプル & 購入
| 製品型番 | パッケージ | 梱包タイプ | 製品ステータス | 概算価格（USS） | 数量 | ECCN (US) | Country of Origin | 販売代理店からオーダー | STからオーダー |
|---|---|---|---|---|---|---|---|---|---|
| STFW8N120K5 | TO-3PF | Tube |
Active
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4.2 | - | EAR99 | KOREA (south) | No availability of distributors reported, please contact our sales office |
STFW8N120K5
パッケージ
TO-3PF梱包タイプ
TubeUnit Price (US$)
4.2*(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
ビデオ
開発ツール･ハードウェア
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写真 製品型番 製造元 概要 ST MOSFET Finder ST MOSFET product finder application for Android and iOS 製品型番MOSFET product finder application for Android and iOS
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| 製品型番 | 製品ステータス | パッケージ | グレード | RoHSコンプライアンスグレード | 材料宣誓書** |
|---|---|---|---|---|---|
| STFW8N120K5 |
Active
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TO-3PF | インダストリアル | Ecopack1 |
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STFW8N120K5
Package:
TO-3PFMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
