-
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
特徴
- 6 µs of short-circuit withstand time
- Low VCE(sat) = 1.55 V (typ.) @ IC = 20 A
- Positive VCE(sat) temperature coefficient
- Tight parameter distribution
- Maximum junction temperature: TJ = 175 °C
注目ビデオ
All resources
製品スペック (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 08 Oct 2018 |
08 Oct 2018
|
フライヤ (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 04 May 2020 |
04 May 2020
|
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STG20M65F2D7
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
サンプル & 購入
| 製品型番 | 販売代理店からオーダー | STからオーダー | 製品ステータス | ECCN (US) | ECCN (EU) | 梱包タイプ | パッケージ | 温度（℃） | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小 | 最大 | |||||||||||
| STG20M65F2D7 |
販売代理店に在庫がない場合は、STのセールスオフィスまでお問い合わせください |
量産中
|
EAR99 | NEC | Not Applicable | D.SCRIB.100% VI STAT | -55 | 175 | CHINA | |||
製品ステータス
量産中ECCN (US)
EAR99（*）概算用の希望小売単価（US$）です。現地通貨でのお見積りについては、STのセールス･オフィスまたは販売代理店までお問い合わせください。
