製品概要
概要
This IGBT is developed using a new advanced proprietary trench gate field-stop fine pitch cell allowing lower VCE(sat) at very high current density. A perfectly engineered trench allows very good tsc with low VCE(sat) and optimized switching performances. Mesa technology multiple field-stop profile reduces VCE overshoot through turn-off di/dt optimization and allows breakdown voltage robustness increase. This die is equipped with sensors circuitry for temperature and current. From a mechanical point of view it offers polyimide top die passivation suitable for power modules and both sides metallization suitable for sintering processes.
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機能一覧
- AEC-Q101 qualified
- 3 μs of minimum short-circuit withstand time at VCC = 450 V, VGE = 15 V, starting TJ = 175 °C
- Low VCE(sat) = 1.5 V (typ.) at IC = 500 A
- Temperature and current sensors integrated circuitry
- Enhanced switching performances
- Increased BV robustness
- Top and back metallization suitable for high performances modules
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STMicroelectronics - STG320MH75FD11AG
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Quality and Reliability
| Part Number | Marketing Status | Grade | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|
| STG320MH75FD11AG | Active 交換品交換品 | Automotive | - | - |
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Sample & Buy
| Part Number | 製品ステータス | Budgetary Price (US$)*/Qty | STから購入 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小 | 最大 | |||||||||||||
| STG320MH75FD11AG | | | distributors 販売代理店に在庫がない場合は、STのセールス･オフィスまでお問い合わせください | |||||||||||
STG320MH75FD11AG Active
販売代理店に在庫がない場合は、STのセールス･オフィスまでお問い合わせください
（*）概算用の参考価格（US$）です。現地通貨でのお見積りについては、STのセールス･オフィスまたは販売代理店までお問い合わせください。