STG320MH75FD11AG
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Automotive-grade narrow mesa trench gate field-stop 750 V, 320 A narrow mesa 2nd series IGBT die in D11 packing

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Product overview

Description

This IGBT is developed using a new advanced proprietary trench gate field-stop fine pitch cell allowing lower VCE(sat) at very high current density. A perfectly engineered trench allows very good tsc with low VCE(sat) and optimized switching performances. Mesa technology multiple field-stop profile reduces VCE overshoot through turn-off di/dt optimization and allows breakdown voltage robustness increase. This die is equipped with sensors circuitry for temperature and current. From a mechanical point of view it offers polyimide top die passivation suitable for power modules and both sides metallization suitable for sintering processes.

  • All features

    • AEC-Q101 qualified
    • 3 μs of minimum short-circuit withstand time at VCC = 450 V, VGE = 15 V, starting TJ = 175 °C
    • Low VCE(sat) = 1.5 V (typ.) at IC = 500 A
    • Temperature and current sensors integrated circuitry
    • Enhanced switching performances
    • Increased BV robustness
    • Top and back metallization suitable for high performances modules

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STMicroelectronics - STG320MH75FD11AG

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Quality and Reliability

Part Number Marketing Status Grade Longevity Commitment Longevity Starting Date Material Declaration**
STG320MH75FD11AG
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Automotive - -

STG320MH75FD11AG

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Automotive

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(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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