-
These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior.
主な特徴
- Low on voltage drop (VCE(sat))
- Low CRES / CIES ratio (no cross-conduction susceptibility)
- Short-circuit withstand time 10 μs
- IGBT co-packaged with ultrafast free-wheeling diode
サンプル & 購入
| 製品型番 | パッケージ | Packing Type | Marketing Status | Budgetary Price (US$)* | 数量 | ECCN (US) | Country of Origin | General Description | Order from Distributors | Order from ST |
|---|---|---|---|---|---|---|---|---|---|---|
| STGP19NC60KD | TO-220AB | Tube |
Active
|
0.957 | 500 | EAR99 | CHINA | 20 A, 600 V short circuit rugged IGBT | Check Availability | Buy now |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
ビデオ
開発ツール･ハードウェア
-
-
写真 Part number 製造元 Description ST-IGBT-FINDER ST IGBT product finder application for Android and iOS 製品型番IGBT product finder application for Android and iOS
-
| 製品型番 | Marketing Status | General Description | パッケージ | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|---|
| STGP19NC60KD |
Active
|
20 A, 600 V short circuit rugged IGBT | TO-220AB | インダストリアル | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
