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The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery half-rated diode is co-packaged in antiparallel with the IGBT.
The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
主な特徴
- Maximum junction temperature: TJ = 175 °C
- Low VCE(sat) = 1.55 V (typ.) @ IC = 40 A
- Soft and very fast recovery half-rated co-packaged diode
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance
- Positive VCE(sat) temperature coefficient
サンプル & 購入
| 製品型番 | パッケージ | 梱包タイプ | 製品ステータス | 概算価格（USS） | Quantity | ECCN (US) | Country of Origin | 概要 | 販売代理店からオーダー | STからオーダー |
|---|---|---|---|---|---|---|---|---|---|---|
| STGWA40H65DHFB2 | TO-247 long leads | Tube | Active | - | - | EAR99 | CHINA | Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package | 販売代理店に在庫がない場合は、STのセールスオフィスまでお問い合わせください |
STGWA40H65DHFB2
パッケージ
TO-247 long leads梱包タイプ
TubeUnit Price (US$)
*(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
ビデオ
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| 製品型番 | 製品ステータス | 概要 | パッケージ | グレード | RoHSコンプライアンスグレード | Material Declaration** |
|---|---|---|---|---|---|---|
| STGWA40H65DHFB2 | Active | Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package | TO-247 long leads | インダストリアル | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
