The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery half-rated diode is co-packaged in antiparallel with the IGBT.
The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
- Maximum junction temperature: TJ = 175 °C
- Low VCE(sat) = 1.55 V (typ.) @ IC = 40 A
- Soft and very fast recovery half-rated co-packaged diode
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance
- Positive VCE(sat) temperature coefficient
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|Part Number||Marketing Status||General Description||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package||TO-247 long leads||Industrial||Ecopack2|
Package:Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package
Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package
TO-247 long leads
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.