Product overview
Description
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery half-rated diode is co-packaged in antiparallel with the IGBT.
The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
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All features
- Maximum junction temperature: TJ = 175 °C
- Low VCE(sat) = 1.55 V (typ.) @ IC = 40 A
- Soft and very fast recovery half-rated co-packaged diode
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance
- Positive VCE(sat) temperature coefficient
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STMicroelectronics - STGWA40H65DHFB2
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