STGWA40H65DHFB2

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Trench gate field-stop 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package

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Product overview

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery half-rated diode is co-packaged in antiparallel with the IGBT.

The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

  • All features

    • Maximum junction temperature: TJ = 175 °C
    • Low VCE(sat) = 1.55 V (typ.) @ IC = 40 A
    • Soft and very fast recovery half-rated co-packaged diode
    • Minimized tail current
    • Tight parameter distribution
    • Low thermal resistance
    • Positive VCE(sat) temperature coefficient

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STMicroelectronics - STGWA40H65DHFB2

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Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Material Declaration**
STGWA40H65DHFB2
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Trench gate field-stop 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package TO-247 long leads Industrial Ecopack2

STGWA40H65DHFB2

Package:

Trench gate field-stop 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package

Material Declaration**:

Marketing Status

Active

General Description

Trench gate field-stop 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package

Package

TO-247 long leads

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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Trench gate field-stop 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package

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