This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.
- Low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power loss
|PowerFLAT 5x6||インダストリアル||Ecopack2|| |
RoHS Compliance Grade
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