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This N-channel Power MOSFET is developed using the STripFET™ F5 technology and has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.
主な特徴
- AEC-Q101 qualified
- Low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power loss
- Wettable flank package
サンプル & 購入
| 製品型番 | パッケージ | 梱包タイプ | 製品ステータス | 概算価格（USS） | 数量 | ECCN (US) | Country of Origin | 販売代理店からオーダー | STからオーダー |
|---|---|---|---|---|---|---|---|---|---|
| STL70N4LLF5 | PowerFLAT 5x6 WF | Tape And Reel | アクティブ | 0.6 | 1000 | EAR99 | CHINA | 在庫チェック | 購入 |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
ビデオ
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
開発ツール･ハードウェア
| 製品型番 | 製品ステータス | パッケージ | グレード | RoHSコンプライアンスグレード | Material Declaration** |
|---|---|---|---|---|---|
| STL70N4LLF5 | アクティブ | PowerFLAT 5x6 WF | オートモーティブ | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
