This N-channel Power MOSFET is developed using the STripFET™ F5 technology and has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.
- AEC-Q101 qualified
- Low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power loss
- Wettable flank package
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ
The smart way to design your application
Discover our medium-voltage N-channel MOSFET portfolio, ranging from > 30 V to 350 V, for a broad range of industrial and automotive applications.
|製品型番||Marketing Status||パッケージ||Grade||RoHS Compliance Grade||Material Declaration**|
|PowerFLAT 5x6 WF||オートモーティブ||Ecopack2|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.