This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.
- AEC-Q101 qualified
- Logic level VGS(th)
- 175 °C maximum junction temperature
- 100% avalanche rated
- Wettable flank package
Learn how ST’s low-voltage power MOSFETs can help you to solve your EMI/EMC issues in motor control applications
Industry’s first 900 V MOSFETs with on-state resistance below 100 mΩ
The smart way to design your application
|PowerFLAT 5x6 WF||オートモーティブ||Ecopack2|
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