The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STN93003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the STN83003, its complementary NPN transistor.
- High voltage capability
- Very high switching speed
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.