This STripFETV Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM.
- RDS(on) * Qg industry benchmark
- Very low switching gate charge
- Extremely low on-resistance RDS(on)
- Low gate drive power losses
- High avalanche ruggedness
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.