製品概要
概要
These devices utilize the 7thgeneration of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
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特徴
- RDS(on)* Qgindustry benchmark
- Extremely low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power losses
EDAシンボル / フットプリント / 3Dモデル
STマイクロエレクトロニクス - STU105N3LLH7
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