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STU105N3LLH7

Obsolete
Design Win

N-channel 30 V, 0.0025 Ohm typ., 80 A, STripFET(TM) VII DeepGATE(TM) Power MOSFET in IPAK package

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Product overview

Description

These devices utilize the 7thgeneration of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

  • All features

    • RDS(on)* Qgindustry benchmark
    • Extremely low on-resistance RDS(on)
    • High avalanche ruggedness
    • Low gate drive power losses

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STU105N3LLH7

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