製品概要
概要
This device is an high voltage N-channel Power MOSFET. This product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics.
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特徴
- Reduced switching losses
- Lower RDS(on) per area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
注目ビデオ
ST offers high-voltage MDmesh M6 & M9 STPOWER MOSFETs in a new compact, thermally efficient package: the TO-LL surface-mounted package offers high electrical and thermal efficiency, compactness and space saving in power conversion applications like SMPS, data centers and solar microinverters. Thanks to the additional Kelvin-source lead, designers can achieve better efficiency due to reduced turn-on/turn-off switching losses.
EDAシンボル / フットプリント / 3Dモデル
STマイクロエレクトロニクス - STU70R1K3S
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すべてのリソース
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SPICE models (1)
| タイトル | バージョン | 更新日 | ||
|---|---|---|---|---|
| ZIP | 1.0 | 09 Sep 2020 | 09 Sep 2020 |