Product overview
Description
This device is an high voltage N-channel Power MOSFET. This product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics.
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All features
- Reduced switching losses
- Lower RDS(on) per area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
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EDA Symbols, Footprints and 3D Models
All resources
| Resource title | Version | Latest update | Actions | Details | Download |
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SPICE models (1)
| Resource title | Version | Latest update | Actions | Options | |
|---|---|---|---|---|---|
| ZIP | 1.0 | 09 Sep 2020 | 09 Sep 2020 |