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概要
This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.
Discover our medium-voltage N-channel power MOSFET portfolio, ranging from > 30 V to 350 V, for a broad range of industrial and automotive applications.
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.