The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
- Monolithic Darlington configuration
- Integrated antiparallel collector-emitter diode
Discover our Darlington transistor portfolio available with a voltage range up to 400 V, with both NPN and PNP polarity.
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.