RF5L08350CB4

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400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor

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製品概要

概要

The RF5L08350CB4 is a 400 W 50 V high-performance, internally matched LDMOS FET, designed for multiple applications over the frequency band 0.4 to 1 GHz.

  • 特徴

    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Internally matched for ease of use
    • Large positive and negative gate/source voltage range
    • In compliance with the European Directive 2002/95/EC

EDAシンボル / フットプリント / 3Dモデル

STマイクロエレクトロニクス - RF5L08350CB4

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