RF5L08350CB4

Obsolete
Design Win

400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor

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Product overview

Description

The RF5L08350CB4 is a 400 W, 50 V high-performance, internally matched LDMOS FET, designed for multiple applications over the frequency band 0.4 to 1 GHz.

  • All features

    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Internally matched for ease of use
    • Large positive and negative gate-source voltage range for improved class C operation
    • Excellent thermal stability, low HCI drift
    • In compliance with the European Directive 2002/95/EC

EDA Symbols, Footprints and 3D Models

The STMicroelectronics team - RF5L08350CB4

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