Product overview
概要
The STAC4932F1MR is an N-channel MOS fieldeffect RF power transistor. It is intended for use in 50 V / 80 V ISM applications up to 250 MHz.
The STAC4932F1MR benefits from the latest generation of environmentally designed packaging, ruggedized against cyclic high moisture operation and severe storage conditions.
This device contains Beryllium oxide (BeO), which is hazardous if inhaled or ingested.
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All features
- Improved ruggedness V(BR)DSS > 200 V
- Load mismatch 65:1 all phases @ 350 W - 50 V - 123 MHz
- POUT = 450 W typ. with 24 dB gain at 123 MHz
- In compliance with the 2002/95/EC European directive
- Moisture resistant package specifically designed to operate in extreme environments
- Drying recommendation before soldering:
- 48 hrs at 125 °C
- Back finishing:
- Sn96.5/Ag3/Cu0.5 solder
- Base flatness < 0.2 mm
- Gold content < 0.1%
- Minimum solder thickness > 2 μm
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STAC4932F1MR
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Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHSコンプライアンスグレード | Material Declaration** |
|---|---|---|---|---|---|
| STAC4932F1MR | Active 交換品交換品 | STAC780-4F | Industrial | Ecopack1 | |
STAC4932F1MR
Package:
STAC780-4FMaterial Declaration**:
(**) st.comで提供している材料宣誓書は、パッケージ･ファミリ内で最も一般的に使用されているパッケージに基づく汎用ドキュメントの場合があります。そのため、特定の製品では100%正確ではない可能性があります。特定の製品情報については、セールスサポートまでお問い合わせください
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Sample & Buy
| Part Number | 製品ステータス | Budgetary Price (US$)*/Qty | STから購入 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STAC4932F1MR | | | distributors 販売代理店に在庫がない場合は、STのセールス･オフィスまでお問い合わせください |
STAC4932F1MR Active
販売代理店に在庫がない場合は、STのセールス･オフィスまでお問い合わせください
（*）概算用の参考価格（US$）です。現地通貨でのお見積りについては、STのセールス･オフィスまたは販売代理店までお問い合わせください。