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STAC4932F1MR

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350 W 50 V HF/VHF DMOS in STAC moisture-resistant flangeless package

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Product overview

Description

The STAC4932F1MR is an N-channel MOS fieldeffect RF power transistor. It is intended for use in 50 V / 80 V ISM applications up to 250 MHz. The STAC4932F1MR benefits from the latest generation of environmentally designed packaging, ruggedized against cyclic high moisture operation and severe storage conditions.
This device contains Beryllium oxide (BeO), which is hazardous if inhaled or ingested.

  • All features

    • Improved ruggedness V(BR)DSS > 200 V
    • Load mismatch 65:1 all phases @ 350 W - 50 V - 123 MHz
    • POUT = 450 W typ. with 24 dB gain at 123 MHz
    • In compliance with the 2002/95/EC European directive
    • Moisture resistant package specifically designed to operate in extreme environments
    • Drying recommendation before soldering:
      • 48 hrs at 125 °C
    • Back finishing:
      • Sn96.5/Ag3/Cu0.5 solder
      • Base flatness < 0.2 mm
      • Gold content < 0.1%
      • Minimum solder thickness > 2 μm
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STMicroelectronics - STAC4932F1MR

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ECCN (US)
ECCN (EU)
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Temperature (°C) Budgetary Price (US$)*/Qty
min
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STAC4932F1MR No availability of distributors reported, please contact our sales office
Active
EAR99 NEC Loose Piece STAC780-4F - -

STAC4932F1MR

Marketing Status

Active

ECCN (US)

EAR99
More Info

ECCN (EU)

NEC

Packing Type

Loose Piece

Package

STAC780-4F

Operating Temperature (°C)

(min)

-

(max)

-

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors