Product overview
Description
The STAC4932F1MR is an N-channel MOS fieldeffect RF power transistor. It is intended for use in 50 V / 80 V ISM applications up to 250 MHz. The STAC4932F1MR benefits from the latest generation of environmentally designed packaging, ruggedized against cyclic high moisture operation and severe storage conditions.This device contains Beryllium oxide (BeO), which is hazardous if inhaled or ingested.
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All features
- Improved ruggedness V(BR)DSS > 200 V
- Load mismatch 65:1 all phases @ 350 W - 50 V - 123 MHz
- POUT = 450 W typ. with 24 dB gain at 123 MHz
- In compliance with the 2002/95/EC European directive
- Moisture resistant package specifically designed to operate in extreme environments
- Drying recommendation before soldering:
- 48 hrs at 125 °C
- Back finishing:
- Sn96.5/Ag3/Cu0.5 solder
- Base flatness < 0.2 mm
- Gold content < 0.1%
- Minimum solder thickness > 2 μm
All resources
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Product Specifications (1)
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17 Apr 2020 |
17 Apr 2020
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Application Notes (1)
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18 Dec 2015 |
18 Dec 2015
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EDA Symbols, Footprints and 3D Models
Sample & Buy
Part Number | Order from Distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Budgetary Price (US$)*/Qty | ||
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min | max | ||||||||||
STAC4932F1MR | No availability of distributors reported, please contact our sales office |
Active
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EAR99 | NEC | Loose Piece | STAC780-4F | - | - |
Marketing Status
ActiveECCN (US)
EAR99(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors