製品概要
概要
This N-channel Power MOSFET utilizes the STripFET™ F7 technology with enhanced trench-gate structure that result in very low on-state resistance while also reducing internal capacitances and gate charge for faster and very efficient switching.
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特徴
- Intended for use in aerospace and defense applications
- Dedicated traceability and part marking
- Production parts approval documents available
- Adapted extended life time and obsolescence management
- Extended product change notification process
- Designed and manufactured to meet sub ppm quality goals
- Extended screening capability on request
- Ultra low on-resistance
- 100% avalanche tested
EDAシンボル / フットプリント / 3Dモデル
STマイクロエレクトロニクス - RTP315N10F7
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