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RTP315N10F7

Obsolete
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Aerospace and defence N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET in a TO-220 package

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Product overview

Description

This N-channel Power MOSFET utilizes the STripFET™ F7 technology with enhanced trench-gate structure that result in very low on-state resistance while also reducing internal capacitances and gate charge for faster and very efficient switching.

  • All features

    • Intended for use in aerospace and defense applications
    • Dedicated traceability and part marking
    • Production parts approval documents available
    • Adapted extended life time and obsolescence management
    • Extended product change notification process
    • Designed and manufactured to meet sub ppm quality goals
    • Extended screening capability on request
    • Ultra low on-resistance
    • 100% avalanche tested
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STMicroelectronics - RTP315N10F7

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