STHU32N65DM6AG: First automotive-grade fast-recovery body diode SJ MOSFET on the market housed in the breakthrough surface-mount, top-side cooling HU3PAK package
Combining the excellent MDmesh DM6 technology switching performances with the benefits of the new breakthrough top-side cooling HU3PAK package, the new AEC-Q101-qualified 650V power MOSFET with high power density capability improves thermal management maximizing the kW/liter factor.
Key features of STHU32N65DM6AG
- Fast-recovery body diode
- Lower RDS(on) per area vs previous generation
- Low gate charge, input capacitance and resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Excellent switching performance thanks to the extra driving source pin
Enhanced power handling for AEC-Q101 Electro Mobility solutions thanks to ST’s fast-recovery body diode super-junction power MOSFET technology.
A user-friendly product selector ensuring a smooth and simple navigation experience with a parametric search engine that lets you rapidly identify the right silicon or silicon-carbide power MOSFET that best fits your application. Available on Google Play, App Store and Wandoujia.
Recommendations and thermal considerations linked to heat sink types and assembly methods