STPSC40065C

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製品概要

概要

The SiC diode is a high voltage power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Used as a freewheeling or output rectification diode, this rectifier will enhance the performance and form factor of the targeted power supply or inverter.

特徴
No reverse recovery charge in application current range

Switching behavior independent of temperature

Dedicated to PFC applications

ECOPACK^®2 compliant component
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Getting started with Schottky and FERD eTool

Getting started with Schottky and FERD eTool video

Watch the video (10:21)

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	Resource title	バージョン	Latest update

SPICE models (1)

	Resource title	バージョン	Latest update
ZIP	Silicon-carbide (SiC) Schottky diode PSpice models (.lib & .olb)	9.0	07 Dec 2021	07 Dec 2021 Silicon-carbide (SiC) Schottky diode PSpice models (.lib & .olb) 9.0