Solar Inverters (String and Central)
String and central inverter are the most common power conversion systems used for grid-connected solar applications. They comprise a DC-DC conversion stage, to adapt voltage levels and implement the Maximum Power Point tracking (MPPT) function, to maximize energy transfer from the panel and a DC-AC conversion stage to correctly shape current and voltage waveforms transferred to the AC grid. The inverter has an anti-islanding function that guarantees safety in case of AC disconnection. With power ranging from a few kilowatts for string and multi-string inverters to tens or hundreds of kilowatts for central inverter solutions, the trend is to use topologies with very high input voltages (up to 1500V).
We offer a broad range of silicon-carbide (SiC) power MOSFETs - with the industry’s highest operating junction temperature of 200 °C - and trench-gate field-stop IGBTs, that can be also combined into our high-efficiency ACEPACK power modules. Together with galvanically-isolated gate drivers and high-performance STM32 microcontrollers we enable engineers to design high-efficiency string and central inverters. In addition we have a range of wireless and wired connectivity solutions.
リソース
技術文書
| Description | バージョン | サイズ | |
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AN1768: ADMISSIBLE AVALANCHE POWER OF SCHOTTKY DIODES | 1.1 | 46 KB |
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AN2025: CONVERTER IMPROVEMENT USING SCHOTTKY RECTIFIER AVALANCHE SPECIFICATION | 1.1 | 147 KB |
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AN604: Calculation of conduction losses in a power rectifier | 3.2 | 137 KB |
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AN4021: Calculation of reverse losses in a power diode | 1.0 | 120 KB |
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AN4653: Cycling endurance and data retention of high density EEPROM based on CMOS F8H process | 1.0 | 267 KB |
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AN3432: How to choose a bypass diode for silicon panel junction box | 1.0 | 290 KB |
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AN4671: How to fine tune your SiC MOSFET gate driver to minimize losses | 1.1 | 555 KB |
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AN4242: New generation of 650 V SiC diodes | 2.0 | 4 MB |
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AN5046: Printed circuit board assembly recommendations for STMicroelectronics PowerFLAT™ packages | 2.0 | 1 MB |
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AN5088: Rectifiers thermal management, handling and mounting recommendations | 1.0 | 1 MB |
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AN3095: STEVAL-ISV002V1, STEVAL-ISV002V2 3 kW grid-connected PV system, based on the STM32F103xx | 3.0 | 3 MB |
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DN0010: Adapting ST power line modem evaluation boards to communicate over a DC bus | 1.1 | 405 KB |
プレゼンテーション & トレーニング資料
| Description | バージョン | サイズ | |
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ACEPACK™ overview | 1.1 | 3 MB |
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EEPROM 2 Mbit highest density memories | 1.0 | 2 MB |
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ST PowerStudio overview | 1.0 | 1 MB |
Publications and Collaterals
| Description | バージョン | サイズ | |
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1200V SiC diodes, 2 to 40 A in surface-mount and through-hole packages | 1.0 | 626 KB |
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400/650 V MDmesh™ DM2: ST’s new MOSFET series with integrated fast-recovery body diode | 1.0 | 205 KB |
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650V HB series IGBTs – innovative 4-lead package | 1.0 | 875 KB |
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ACEPACK™: Adaptable, Compact, and Easier Packages Power Modules | 1.0 | 769 KB |
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HB series 650 V IGBTs Trench Gate Field-stop High-speed technologies | 1.0 | 183 KB |
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ST Diodes Finder : the new app for Android and iOS | 2.0 | 1 MB |
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STGAP1AS - 革新的な堅牢性と優れた柔軟性を実現するガルバニック絶縁素子内蔵ゲート･ドライバ | 03.2017 | 263 KB |
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SiC MOSFETs: The real breakthrough in high-voltage switching | 3.0 | 651 KB |
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Trench gate field-stop IGBT 1200V M series | 1.0 | 845 KB |
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ST8500 スマート･グリッド社会の実現に貢献 | 10.2017 | 735 KB |
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パワー･マネージメントガイド 2017 | 09.2017 | 3 MB |
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STM32F3 series - Mainstream 32-bit MCUs | 17.09 | 1 MB |
