The SiC diode is a high voltage power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Used as a freewheeling or output rectification diode, this rectifier will enhance the performance and form factor of the targeted power supply or inverter.
- No reverse recovery charge in application current range
- Switching behavior independent of temperature
- Dedicated to PFC applications
- ECOPACK®2 compliant component
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Sample & Buy
|Part Number||Order from Distributors||Order from ST||Marketing Status||Package||Packing Type||Junction Temperature (°C) (max)||ECCN (US)||Country of Origin||Budgetary Price (US$)*/Qty|
|STPSC40065CW|| 4 distributors |
Distributor availability ofSTPSC40065CW
Distributor reported inventory date: 2020-07-03
|Buy now|| |
|TO-247||Tube||175||EAR99||CHINA||5.002 / 100|
Unit Price (US$)5.002
Junction Temperature (°C) (max)
Country of Origin