製品概要
概要
GaN-based motion control is the focus of the GaNSPIN platform. Unlike many general-purpose solutions or those tailored for power conversion, the GaNSPIN series is specifically engineered to meet the peculiar demands of motion control systems.
The GANSPIN612 is an advanced power system-in-package integrating two enhancement mode GaN transistors in half-bridge configuration driven by a state-of-the-art high-voltage, high-frequency gate driver.
The integrated power GaNs have RDS(ON) of 270 mΩ and 650 V drain source breakdown voltage, while the high-side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
The GANSPIN612, being designed for motion control, optimizes the output dV/dt to 10 V/ns typ. for both hard-on and hard-off. This is required in motor control for EMI, motor winding, and ball bearing reliability.
Robustness and reliability are also distinctive factors of the GaNSPIN series. Embedding advanced protections, GaNSPIN devices ensure the best possible system robustness. SmartShutdown overcurrent protection delivers the fastest response possible thanks to embedded logic and dedicated fast comparators.
The GANSPIN series also features linear regulators on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions. The UVLO is fine-tuned for motion control for optimal performances.
The GANSPIN612 is available in a compact 9x9x1 mm QFN package and operates in the industrial temperature range, -40 °C to 125 °C.
The GaNSPIN612 is pin-to-pin with GaNSPIN611 (RDS(ON) of 138 mΩ) to maximize scalability in a platform approach.
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特徴
- Power system-in-package family integrating high-voltage GaN transistors in half-bridge configuration with high-voltage gate driver:
- RDS(ON) = 270 mΩ
- IDS(MAX) = 5.5 A
- Reverse conduction capability and zero reverse recovery loss
- 10 V/ns typ. output dV/dt in both hard-on and hard-off, tailored for motor control
- Externally adjustable turn-on dV/dt
- Linear regulators to regulate high-side and low-side driver supply voltage
- Internal bootstrap diode
- Comparator for overcurrent detection with Smart Shutdown function
- UVLO protection on VCC, VHS and VLS
- Interlocking function, shutdown, standby and fault pins
- 55 ns gate driver leading to overall 150 ns typ. output propagation delay
- 3.3 V to 20 V compatible inputs with hysteresis and pull-down
- Power system-in-package family integrating high-voltage GaN transistors in half-bridge configuration with high-voltage gate driver:
関連製品
EDAシンボル / フットプリント / 3Dモデル
STマイクロエレクトロニクス - GANSPIN612
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品質 & 信頼性
| 製品型番 | マーケティング･ステータス | パッケージ | グレード | RoHSコンプライアンスグレード | Longevity Commitment | Longevity Starting Date | 材料宣誓書** |
|---|---|---|---|---|---|---|---|
| GANSPIN612 | 量産中 | TFQFPN 9X9X1.05 35L PITCH 0.6MM | インダストリアル | Ecopack2 | 10 | 2025-01-01T00:00:00.000+01:00 | |
| GANSPIN612TR | 量産中 | TFQFPN 9X9X1.05 35L PITCH 0.6MM | インダストリアル | Ecopack2 | 10 | 2025-01-01T00:00:00.000+01:00 | |
GANSPIN612
Package:
TFQFPN 9X9X1.05 35L PITCH 0.6MMMaterial Declaration**:
GANSPIN612TR
Package:
TFQFPN 9X9X1.05 35L PITCH 0.6MMMaterial Declaration**:
(**) st.comで提供している材料宣誓書は、パッケージ･ファミリ内で最も一般的に使用されているパッケージに基づく汎用ドキュメントの場合があります。そのため、特定の製品では100%正確ではない可能性があります。特定の製品情報については、セールスサポートまでお問い合わせください
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サンプル & 購入
| 製品型番 | 製品ステータス | Budgetary Price (US$)*/Qty | STから購入 | Order from distributors | パッケージ | 梱包タイプ | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小 | 最大 | |||||||||||||
| GANSPIN612 | | | distributors 販売代理店に在庫がない場合は、STのセールス･オフィスまでお問い合わせください | |||||||||||
| GANSPIN612TR | | | distributors 販売代理店に在庫がない場合は、STのセールス･オフィスまでお問い合わせください | |||||||||||
GANSPIN612 量産中
販売代理店に在庫がない場合は、STのセールス･オフィスまでお問い合わせください
GANSPIN612TR 量産中
販売代理店に在庫がない場合は、STのセールス･オフィスまでお問い合わせください
（*）概算用の参考価格（US$）です。現地通貨でのお見積りについては、STのセールス･オフィスまたは販売代理店までお問い合わせください。